PART |
Description |
Maker |
CY7C1354CV25-166AXC CY7C1356CV25-166AXC CY7C1354CV |
9-Mbit (256 K 36/512 K 18) Pipelined SRAM with NoBLArchitecture 9-Mbit (256 K × 36/512 K × 18) Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor
|
M58PV001LE96ZB5 M58PR001LE M58PR001LE96ZB5 M58PR25 |
256-Mbit, 512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
JS28F256P33BFA 320003 |
NumonyxTM StrataFlash Embedded Memory P33 (256-Mbit, 256-Mbit/256- Mbit) 130nm to 65nm
|
Numonyx B.V
|
CY7C1362C-166AJXC CY7C1360C-166AJXC CY7C1360C-166A |
9-Mbit (256 K × 36/512 K × 18) Pipelined SRAM
|
Cypress Semiconductor
|
M29W400DT07 M29W400DB55M1 M29W400DB55M1E M29W400DB |
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory
|
STMicroelectronics
|
M29W400DB55N1 M29W400DB55N1E M29W400DB55N1F M29W40 |
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
AM41PDS3224DB35IS AM41PDS3224DB40IS AM41PDS3224DT1 |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位).8伏的CMOS只,同时操作,页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位),静态存储器 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位)1.8伏的CMOS只,同时操作,页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位),静态存储器 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
|
Advanced Micro Devices, Inc.
|
CY7C4215-35JC CY7C4225-10ASC CY7C4225-10AI CY7C422 |
64, 256, 512, 1K, 2K, 4K x 18 Synchronous FIFOs 64/256/512/1K/2K/4K x18 Low-Voltage Synchronous FIFOs 4K X 18 OTHER FIFO, 11 ns, PQFP64 64/256/512/1K/2K/4K x18 Low-Voltage Synchronous FIFOs 2K X 18 OTHER FIFO, 15 ns, PQFP64 64/256/512/1K/2K/4K x18 Low-Voltage Synchronous FIFOs 512 X 18 OTHER FIFO, 8 ns, PQFP64 64/256/512/1K/2K/4K x18 Low-Voltage Synchronous FIFOs 4K X 18 OTHER FIFO, 15 ns, PQFP64 64/256/512/1K/2K/4K x18 Low-Voltage Synchronous FIFOs 256 X 18 OTHER FIFO, 10 ns, PQFP64 64/256/512/1K/2K/4K x18 Low-Voltage Synchronous FIFOs 256 X 18 OTHER FIFO, 8 ns, PQCC68 64/256/512/1K/2K/4K x18 Low-Voltage Synchronous FIFOs 1K X 18 OTHER FIFO, 8 ns, PQFP64 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; No. of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Gender:Female SERIAL DTE CABLE WITH DB9 FEMALE CONNECTOR Circular Connector; No. of Contacts:5; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:14-5 OSC 5V SMT 7X5 CMOS PROGRM SERVSWITCH AFFINITY SERIADTE CABLE DB9F-10FT
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
AM41PDS3224D |
32 Mbit (2 M x 16-Bit) CMOS 1.8 Volt-only. Simultaneous Operation Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM (Preliminary) 32兆位米16位)的CMOS电压1.8只。同时采取行动,页面模式闪存兆位12x 8-Bit/256x 16位),静态存储器(初步) Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
Advanced Micro Devices
|
SST37VF512 |
(SST37VFxxx) 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash
|
Silicon Storage Technology
|
IDT7202 IDT7200L12J IDT7200L12J8 IDT7200L12SO IDT7 |
1K x 9 AsyncFIFO, 5.0V 512 x 9 AsyncFIFO, 5.0V 256 x 9 AsyncFIFO, 5.0V CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9 and 1,024 x 9
|
IDT
|